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參數(shù)資料
| 型號： | AGR09090EF |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 484K |
| 代理商： | AGR09090EF |
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09090EF
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics (921 MHz—960 MHz, 865 MHz—895 MHz)
Table 5. RF Characteristics (921 MHz—960 MHz)
1. Across full GSM band, 921 MHz—960 MHz.
2. Measured according to 3GPP GSM 05.05.
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0, ID = 200 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
—
2.6
Adc
Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V)
IDSS
—
8
Adc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 1.0 A)
GFS
—
6
—
S
Gate Threshold Voltage (VDS = 10 V, ID = 400 A)
VGS(TH)
—
4.8
Vdc
Gate Quiescent Voltage (VDS = 26 V, IDQ = 700 mA)
VGS(Q)
—
3.6
—
Vdc
Drain-source On-voltage (VGS = 10 V, ID = 1.0 A)
VDS(ON)
—
0.12
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
COSS
—
48
—
pF
Reverse Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
CRSS
—
2.3
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)1
Power Gain
(VDS = 26 V, POUT =
50 W, IDQ = 700 mA)
GL
17
17.8
—
dB
Drain Efficiency
(VDS = 26 V, POUT = P1dB, IDQ = 700 mA)
50
60
—
%
EDGE Linearity Characterization2
(POUT = 40 W, f = 941 MHz, VDS = 26 V, IDQ = 700 mA)
Modulation Spectrum @ ±400 kHz
—
–60
—
dBc
Modulation Spectrum @ ±600 kHz
—
–72
—
dBc
Output Power
(VDS = 26 V, 1 dB gain compression, IDQ = 700 mA)
P1dB
90
105
—
W
Input Return Loss
RL
—
–
10
—
dB
Ruggedness
(VDS = 26 V, POUT = 90 W, IDQ = 700 mA, VSWR = 10:1, all angles)
No degradation in output
power.
300
150
(in Supplied Test Fixture)
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