參數(shù)資料
型號(hào)： AGR09090EF
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁(yè)數(shù)： 9/14頁(yè)
文件大?。?/td> 484K
代理商： AGR09090EF
90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09090EF
Test Circuit Illustrations for AGR09090EF, 921 MHz—960 MHz
A. Schematic, 921 MHz—960 MHz
Parts List:
Microstrip line: Z1 0.035 in. x 0.066 in.; Z2 0.120 in. x 0.066 in.; Z3 0.475 in. x 0.100 in.; Z4 0.050 in. x 0.100 in.; Z5 0.129 in. x 0.100 in.;
Z6 0.958 in. x 0.050 in.; Z7 0.629 in. x 0.532 in.; Z8 0.050 in. x 0.532 in.; Z9 0.100 in. x 0.532 in.; Z10 0.050 in. x 0.532 in.;
Z11 0.412 in. x 0.532 in.; Z12 0.050 in. x 0.532 in.; Z13 0.122 in. x 0.532 in.; Z15 0.050 in. x 0.532 in.; Z16 0.173 in. x 0.532 in.;
Z17 1.916 in. x 0.050 in.; Z18 0.734 in. x 0.100 in.; Z19 0.050 in. x 0.100 in.; Z20 0.086 in. x 0.100 in.; Z21 0.208 in. x 0.066 in.;
Z22 0.208 in. x 0.066 in.; Z23 0.278 in. x 0.066 in.; Z24 0.305 x 0.050
ATC chip capacitor: C1, C6, C15, C16: 47 pF 100B470JW500X; C2: 2.7 pF 100B2R7JW500X; C3: 2.0 pF 100B2R0CW
C4, C5, C11, C12: 12 pF 100B120JW500X; C7: 22 pF 100B220JW500X; C13, C21: 1 pF 100B1R0BW500X; C14: 4.7 pF 100B4R7CW;
C17: 10 pF 100B100JW500X; C23: 8.2 pF 100A8R2CW.
Sprague tantalum surface-mount chip capacitor: C10, C20 10 F, 35 V; C22 22 F, 35 V.
Murata 0805 size chip capacitor: C8, C18: 0.01 F GRM40X7R103K100AL.
Kemet 1206 size chip capacitor: C9, C19: 0.1 F C1206104K5RAC7800.
1206 size chip resistor: R1 51
RM73B2B510, R2 1 k
RM73B2B130.
Kreger ferrite bead: FB1 2743D19447.
Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, r = 3.5.
B. Component Layout, 921 MHz—960 MHz
Figure 2. AGR09090EF Test Circuit, 921 MHz—960 MHz
DUT
R1
C8
C22
Z1
C1 Z2
Z3
Z4
Z5
Z22
C15
Z16
Z18
Z19
Z20
C16
RF
VGG
VDD
RF OUTPUT
Z7
Z10
FB1
C9
C7
C6
C5
C4
C11
C12
Z11
C18
C20
C19
C17
C3
Z17
1
3
2
PINS:
1. DRAIN
2. GATE
3. SOURCE
C2
C10
R2
Z6
Z8
Z9
Z12
Z13
Z14
INPUT
C21
C13
Z15
Z21
C14
Z23
C23
Z24
相關(guān)PDF資料
PDF描述
AGR09090EF UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR09090EF UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR19030EU L BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR19045EF L BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGR19045EF L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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參數(shù)描述
AGR09130E 制造商:TRIQUINT 制造商全稱(chēng):TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET
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AGR09130EU 制造商:TRIQUINT 制造商全稱(chēng):TriQuint Semiconductor 功能描述:130 W, 921 MHz-960 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09180EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR1000 功能描述:可復(fù)位保險(xiǎn)絲 10/9.6A 16V 100A RoHS:否 制造商:Bourns 電流額定值: 電阻:7.5 Ohms 最大直流電壓: 保持電流:0.1 A 安裝風(fēng)格:SMD/SMT 端接類(lèi)型:SMD/SMT 跳閘電流:0.6 A 引線間隔: 系列:MF-PSHT 工作溫度范圍:- 40 C to + 125 C
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