參數(shù)資料
型號(hào)： AGR19125EF
廠商： LSI CORP
元件分類(lèi)： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： FM-2
文件頁(yè)數(shù)： 5/11頁(yè)
文件大小： 225K
代理商： AGR19125EF
Agere Systems Inc.
3
Preliminary Data Sheet
AGR19125E
April 2004
125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Test Circuit Illustrations for AGR19125E
A. Schematic
B. Component Layout
Figure 2. AGR19125E Test Circuit
Parts List:
s
Microstrip Line:
Z1 0.785 in. x 0.065 in.
Z2 0.205 in. x 0.065 in.
Z3 0.070 in. x 0.255 in.
Z4 0.378 in. x 0.065 in.
Z5 0.177 in. x 0.860 in.
Z6 0.050 in. x 0.247 in.
Z7 0.050 in. x 0.593 in.
Z8 0.500 in. x 1.030 in.
Z9 0.323 in. x 0.185 in.
Z10 0.465 in. x 0.115 in.
Z11 0.075 in. x 0.065 in.
Z12 0.252 in. x 0.065 in.
s
ATC chip capacitor:
C1 10 pF 100B100JW500X
C5, C14, C15: 5.6 pF100B5R6BW500X
C9 6.8 pF 100B6R8JW500X
C10 1.2 pF 100B1R2BW500X
C16: 15 pF 100B150JW500X.
s
Sprague tantalum surface-mount chip capacitor:
C2, C4, C11, C12: 22 F, 35 V.
s
Kemet 1206 size chip capacitor:
C6, C13: 0.1 F C1206104K5RAC7800.
s
Murata 0805 size chip capacitor:
C8 0.01 F GRM40X7R103K100AL.
s
Johanson Giga-Trim variable capacitor:
C17 0.6 pF to 4.5 pF 27271SL.
s
1206 size chip capacitor: C3, C7: 22000 pF.
s
1206 size chip resistor: R1 1 k
; R2 560 k; R3 4.7 .
s
Fair-Rite ferrite bead: FB1 2743019447.
s
Taconic ORCER RF-35: board material, 1 oz. cop-
per, 30 mil thickness,
εr = 3.5.
DUT
R3
C2
R2
R1
+
C3
C4
+
C5
FB1
Z6
Z1
C1
Z2
Z3
Z4
Z5
Z8
Z9
Z10
Z13
C9
C8
C7
C6
Z7
C13
C12
C11
+
C10
C14
RF INPUT
VGG
VDD
RF
C16
C15
OUTPUT
+
1
2
3
PINS:
1. DRAIN
2. GATE
3. SOURCE
Z11
C17
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AGR19125EU 制造商:TRIQUINT 制造商全稱(chēng):TriQuint Semiconductor 功能描述:125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
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AGR19K180EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR21030EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR21045EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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