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參數(shù)資料
| 型號： | AGR26045EF |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 373K |
| 代理商： | AGR26045EF |
45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
AGR26045EF
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
* 3GPP W-CDMA, typical P/A ratio of 8.5 dB at 0.01% CCDF, f1 = 2645 MHz, and f2 = 2655 MHz. VDD = 28 Vdc, IDQ = 430 mA, and
POUT = 6.5 W avg.
Parameter
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS = 0, ID = 50 A)
V(BR)DSS
65
—
Vdc
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
—
2
Adc
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)
IDSS
—
5
Adc
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 0.5 A)
GFS
—
3.2
—
S
Gate Threshold Voltage (VDS = 10 V, ID = 150 A)
VGS(TH)
—
4.8
Vdc
Gate Quiescent Voltage (VDS = 28 V, ID = 430 mA)
VGS(Q)
—
3.8
—
Vdc
Drain-source On-voltage (VGS = 10 V, ID = 0.5 A)
VDS(ON)
—
0.22
—
Vdc
Parameter
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
(This part is internally matched on both the input and output.)
CRSS
—
1.0
—
pF
Functional Tests (in Agere Systems Supplied Test Fixture)
Common-source Amplifier Power Gain*
GPS
—
13
—
dB
Drain Efficiency*
η
—
21
—
%
Third-order Intermodulation Distortion*
(IM3 distortion measured over 3.84 MHz BW @ f1 – 10 MHz
and f2 + 10 MHz)
IM3
—
–38
—
dBc
Adjacent Channel Power Ratio*
(ACPR measured over BW of 3.84 MHz @ f1 – 5 MHz
and f2 + 5 MHz)
ACPR
—
–40
—
dBc
Input Return Loss*
IRL
—
–15
—
dB
Power Output, 1 dB Compression Point
(VDD = 28 V, fC = 2655.0 MHz. CW)
P1dB
43
—
W
Output Mismatch Stress
(VDD = 28 V, POUT = 45 W (CW), IDQ = 430 mA, fC = 2655.0 MHz
VSWR = 10:1; [all phase angles])
ψ
No degradation in output power.
75
(in Supplied Test Fixture)
= 200A
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