參數(shù)資料
型號(hào): AGR26045EF
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: S BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù): 8/9頁
文件大?。?/td> 373K
代理商: AGR26045EF
45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET
AGR26045EF
Typical Performance Characteristics (continued)
Test conditions:
Two-carrier W-CDMA 3GPP, peak-to-average = 8.5 dB @ 0.01% CCDF, POUT = 6.5 W, VDD = 28 V, IDQ = 430 mA.
Figure 10. Spectrum
Center
2.6 GHz
Span
50 MHz
-4 5
-4 0
-3 5
-3 0
-2 5
-2 0
-1 5
-1 0
-5
0
| IMD3 |
|
| ACP
ACP |
|
| F1 |
| F2 |
相關(guān)PDF資料
PDF描述
AGRA10XM UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AGRA10XM UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
AH1201DI DATACOM TRANSFORMER FOR 10/100 BASE-T APPLICATION(S)
AH1201DS DATACOM TRANSFORMER FOR 10/100 BASE-T APPLICATION(S)
AH1202DI DATACOM TRANSFORMER FOR 10/100 BASE-T APPLICATION(S)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AGR26125E 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET
AGR26125EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR26125EU 制造商:TRIQUINT 制造商全稱:TriQuint Semiconductor 功能描述:125 W, 2.5 GHz-2.7 GHz, N-Channel E-Mode, Lateral MOSFET
AGR26180EF 功能描述:射頻MOSFET電源晶體管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
AGR34006827 制造商:LG Corporation 功能描述:Pipe Assembly,Telescopic