參數(shù)資料
型號(hào)： AM29BDS320GTC8VMF
廠商： SPANSION LLC
元件分類： PROM
英文描述： 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA64
封裝： 8 X 9 MM, 0.80 MM PITCH, FBGA-64
文件頁數(shù)： 70/75頁
文件大小： 1075K
代理商： AM29BDS320GTC8VMF
70
Am29BDS320G
27243B2 May 15, 2007
Data
Sheet
Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 1.8 V VCC, 1 million cycles. Additionally,
programming typicals assumes a checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 1.65 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Table 14 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1 million cycles.
FBGA Ball Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Data Retention
Parameter
Unit
Comments
Sector Erase Time
0.4
5
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
28
s
Word Programming Time
11.5
210
s
Excludes system level
overhead (Note 5)
Accelerated Word Programming Time
4
120
s
Chip Programming Time (Note 3)
25
75
s
Excludes system level
overhead (Note 5)
Accelerated Chip Programming Time
9
27
s
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
4.2
5.0
pF
COUT
Output Capacitance
VOUT = 0
5.4
6.5
pF
CIN2
Control Pin Capacitance
VIN = 0
3.9
4.7
pF
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150°C10
Years
125°C20
Years
相關(guān)PDF資料
PDF描述
AM29DL163CB70RZCB 2M X 8 FLASH 3V PROM, 70 ns, PDSO48
AM29DL162CB120WCEB 2M X 8 FLASH 3V PROM, 120 ns, PBGA48
AM29DL162CB120EIN 2M X 8 FLASH 3V PROM, 120 ns, PDSO48
AM29DL162CT120EIB 2M X 8 FLASH 3V PROM, 120 ns, PDSO48
AM29DL320GB120PCI 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29BDS643GT5KVAI 制造商:Spansion 功能描述:FLASH PARALLEL 1.8V 64MBIT 4MX16 55NS 44FBGA - Trays
AM29BL802CB-65RZET 制造商:Spansion 功能描述:
AM29C01WW WAF 制造商:Advanced Micro Devices 功能描述:
AM29C10API 制造商:Rochester Electronics LLC 功能描述:- Bulk
AM29C10AWW DIE 制造商:Advanced Micro Devices 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*