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| 型號： | AM29DL642G70MDI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo |
| 中文描述： | 8M X 16 FLASH 3.3V PROM MODULE, 70 ns, PBGA63 |
| 封裝： | 10.95 X 11.95 MM, 0.80 MM PITCH, FBGA-63 |
| 文件頁數(shù)： | 3/54頁 |
| 文件大?。?/td> | 828K |
| 代理商： | AM29DL642G70MDI |
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This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
26503
Issue Date:
June 10, 2005
Rev:
B
Amendment/
+2
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29DL642G
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only
Simultaneous Read/Write Flash Memory
DISTINCTIVE CHARACTERISTICS
■
Two 64 Megabit (Am29DL640G) in a single 63-ball 12
x 11 mm Fine-pitch BGA package (features are
described herein for each internal Am29DL640G)
■
Two Chip Enable inputs
— Two CE# inputs to control selection of each internal
Am29DL640G devices
■
Single power supply operation
— 2.7 to 3.6 volt read, erase, and program operations
■
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank.
— Zero latency between read and write operations
■
Flexible Bank
TM
architecture
— Read may occur in any of the three banks not being
written or erased.
— Four banks may be grouped by customer to achieve
desired bank divisions.
■
Boot Sectors
— Top and bottom boot sectors in the same device
— Any combination of sectors can be erased
■
SecSi (Secured Silicon) SectorSecSi
TM
(Secured
Silicon) Sector: Extra 256 Byte sector
—
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
—
Customer lockable:
One-time programmable only.
Once locked, data cannot be changed
■
High performance
— 70 or 90 ns access time
■
Manufactured on 0.17 μm process technology
■
CFI (Common Flash Interface) compliant
— Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
■
Ultra low power consumption (typical values at 3.0 V,
5 MHz) for the part
— 10 mA typical active read current
— 15 mA typical erase/program current
— 400 nA typical standby mode current
■
Flexible sector architecture
— Two hundred fifty-six 32 Kword sectors
■
Compatibility with JEDEC standards
— Except for the added CE2#, the Fine-pitch BGA is
pinout and software compatible with single-power
supply Flash
— Superior inadvertent write protection
■
Minimum 1 million erase cycle guarantee per sector
■
63-ball Fine-pitch BGA Package
SOFTWARE FEATURES
■
Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
■
Supports Common Flash Memory Interface (CFI)
■
Erase Suspend/Erase Resume
— Suspends erase operations to allow reading from
other sectors in same bank
■
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
■
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
■
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
■
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
■
WP#/ACC input pin
— Write protect (WP#) function protects sectors 0, 1,
140, and 141, regardless of sector protect status
— Acceleration (ACC) function accelerates program
timing
■
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
This product has been retired and is not recommended for designs. For new and current designs, S29PL127J supersedes AM29DL642G as the factory-recommended migration path.
Please refer to the S29PL127J datasheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.
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| AM29DL642G90I | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo |
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| AM29DL800BB120ED | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
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| AM29DL800BT70ED | 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29DL800BB-120WBD | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 8Mbit 1M/512K x 8bit/16bit 120ns 48-Pin FBGA |
| AM29DL800BB-70SI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 70NS 44SOIC - Trays |
| AM29DL800BB-90EI | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 8Mbit 1M/512K x 8bit/16bit 90ns 48-Pin TSOP |
| AM29DL800BT-120EC | 制造商:Spansion 功能描述:SPZAM29DL800BT-120EC TB 120n EOL160610 |
| AM29DL800BT-120WBC | 制造商:Advanced Micro Devices 功能描述: |
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