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參數(shù)資料
| 型號(hào)： | AM29DL642G |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo |
| 中文描述： | 128兆位（8米× 16位）的CMOS 3.0伏，只有同時(shí)讀/寫閃存?zhèn)渫?/td> |
| 文件頁(yè)數(shù)： | 52/54頁(yè) |
| 文件大?。?/td> | 828K |
| 代理商： | AM29DL642G |
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50
Am29DL642G
June 10, 2005
P R E L I M I N A R Y
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0 V V
CC
, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°
C, V
CC
= 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
13 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.4
5
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
56
sec
Accelerated Word Program Time
4
120
μs
Excludes system level
overhead (Note 5)
Word Program Time
7
210
μs
Chip Program Time (Note 3)
28
84
sec
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°
C
10
Years
125
°
C
20
Years
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