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參數(shù)資料
| 型號(hào)： | AM29DL642G |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo |
| 中文描述： | 128兆位（8米× 16位）的CMOS 3.0伏，只有同時(shí)讀/寫閃存?zhèn)渫?/td> |
| 文件頁數(shù)： | 54/54頁 |
| 文件大小： | 828K |
| 代理商： | AM29DL642G |
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52
Am29DL642G
June 10, 2005
P R E L I M I N A R Y
REVISION SUMMARY
Revision A (June 12, 2002)
Initial release.
Revision B (August 27, 2002)
Global
Changed speed rating from 90 ns to 70 ns. Deleted
references and data related to byte mode.
Ordering Information
Added FSD063 package drawing and part number
designator.
Common Flash Interface (CFI)
In 3rd paragraph, corrected last sentence to indicate
that after a reset command, device returns to reading
array data, not autoselect mode.
DC Characteristics
Changed maximum current for I
CC3
, I
CC4,
I
CC5
to 10 mA.
In Note 1, indicated that specification is for one die ac-
tive at a time.
AC Characteristics
Read-only Operations:
Changed t
DF
from 30 to 16 ns,
and t
OE
from 35 to 30 ns. Added note reference to
tACC.
Erase and Program Operations:
Changed t
AH
and t
DS
from 45 to 40 ns, and t
WP
from 35 to 30 ns.
Physical Dimensions
Added FSD063 package drawing.
Revision B+1 (September 5, 2002)
Global
Added 90 ns speed option.
DC Characteristics
Deleted I
ACC
parameter from table.
Revision B+2 (June 10, 2005)
Modified disclaimers
Trademarks
Copyright 2002-2005 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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| AM29DL800BT-120WBC | 制造商:Advanced Micro Devices 功能描述: |
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