參數(shù)資料
型號(hào): AM29LV008BT-90ED
廠商: SPANSION LLC
元件分類: PROM
英文描述: Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
中文描述: 1M X 8 FLASH 3V PROM, 90 ns, PDSO40
封裝: LEAD FREE, MO-142BCD, TSOP-40
文件頁(yè)數(shù): 10/41頁(yè)
文件大?。?/td> 738K
代理商: AM29LV008BT-90ED
18
Am29LV008B
21524D7 February 24, 2009
D A TA SH EET
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the
device has resumed erasing.
Notes:
1. See Table 5 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 4.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh?
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料
PDF描述
AM29LV008BT-90EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29LV008T-150SKB 1M X 8 FLASH 3V PROM, 150 ns, PDSO44
AM29LV010B-55ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:10Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes
AM29LV160DT-70FK 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
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