參數(shù)資料
型號: AM29LV008BT-90ED
廠商: SPANSION LLC
元件分類: PROM
英文描述: Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
中文描述: 1M X 8 FLASH 3V PROM, 90 ns, PDSO40
封裝: LEAD FREE, MO-142BCD, TSOP-40
文件頁數(shù): 30/41頁
文件大?。?/td> 738K
代理商: AM29LV008BT-90ED
36
Am29LV008B
21524D7 February 24, 2009
D A TA SH EET
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
Speed Option
JEDEC
Std
Description
-70R
-90
-120
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
90
120
ns
tAVEL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
50
ns
tDVEH
tDS
Data Setup Time
Min
35
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
50
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWH1
Programming Operation
Typ
9
s
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
相關(guān)PDF資料
PDF描述
AM29LV008BT-90EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29LV008T-150SKB 1M X 8 FLASH 3V PROM, 150 ns, PDSO44
AM29LV010B-55ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:10Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes
AM29LV160DT-70FK 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
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