參數(shù)資料
型號(hào)： AM29LV008BT-90ED
廠商： SPANSION LLC
元件分類： PROM
英文描述： Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
中文描述： 1M X 8 FLASH 3V PROM, 90 ns, PDSO40
封裝： LEAD FREE, MO-142BCD, TSOP-40
文件頁數(shù)： 6/41頁
文件大小： 738K
代理商： AM29LV008BT-90ED
14
Am29LV008B
21524D7 February 24, 2009
D A TA SH EET
Temporary Sector Unprotect
This feature allows temporary unprotection of previ-
ously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the
RESET# pin to VID. During this mode, formerly pro-
tected sectors can be programmed or erased by
selecting the sector addresses. Once VID is removed
from the RESET# pin, all the previously protected
sectors are protected again. Figure 2 shows the algo-
rithm, and Figure 20 shows the timing diagrams, for this
feature.
Figure 2.
Temporary Sector Unprotect Operation
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadver tent writes (refer to Table 5 for
command definitions). In addition, the following hard-
ware data protection measures prevent accidental
erasure or programming, which might otherwise be
caused by spurious system level signals during VCC
power-up and power-down transitions, or from system
noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not
accept any write cycles. This protects data during VCC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until VCC
is greater than VLKO. The system must provide the
proper signals to the control pins to prevent uninten-
tional writes when VCC is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
START
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
RESET# = VID
(Note 1)
Note:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once
again.
相關(guān)PDF資料
PDF描述
AM29LV008BT-90EF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
AM29LV008T-150SKB 1M X 8 FLASH 3V PROM, 150 ns, PDSO44
AM29LV010B-55ED Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:10Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:55ns; Series:AM29 RoHS Compliant: Yes
AM29LV160DT-70FK 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
AM29LV200BT-55RFC 128K X 16 FLASH 3V PROM, 55 ns, PDSO48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV008DT-90EC 制造商:Spansion 功能描述:8M (1MX8) 3V, BOOT BLOCK, TOP, TSOP40, COM - Trays
AM29LV010B-45JC 制造商:Spansion 功能描述:1M (128KX8) 3V, UNIFORM SECTOR, PLCC32, COM - Rail/Tube
AM29LV010B-55JCT 制造商:Spansion 功能描述:1M (128KX8) 3V, UNIFORM SECTOR, PLCC32, COM, T&R - Tape and Reel
AM29LV010B-70ED 制造商:Spansion 功能描述:IC SM FLASH 3V 1MB
AM29LV010B-70ED 制造商:Spansion 功能描述:FLASH MEMORY IC
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*