參數(shù)資料
型號: AM29LV081B120EE
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
中文描述: 8兆位(1米× 8位)的CMOS 3.0伏特,只有統(tǒng)一部門閃存
文件頁數(shù): 26/40頁
文件大小: 438K
代理商: AM29LV081B120EE
24
Am29LV081B
21525D6
October 12, 2006
DA T A S HE E T
TEST CONDITIONS
Table 6. Test Specifications
Key to Switching Waveforms
2.7 k
Ω
C
L
6.2 k
Ω
3.3 V
Device
Under
Test
Figure 11. Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
-70
-90,
-120
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
Figure 12. Input Waveforms and Measurement Levels
相關(guān)PDF資料
PDF描述
AM29LV081B120EF 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B120EI 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B120EK 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B-70ED 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B-70EF 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
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