參數(shù)資料
型號(hào): AM29LV081B120EE
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
中文描述: 8兆位(1米× 8位)的CMOS 3.0伏特,只有統(tǒng)一部門閃存
文件頁數(shù): 29/40頁
文件大?。?/td> 438K
代理商: AM29LV081B120EE
21525D6
October 12, 2006
Am29LV081B
27
D AT A S H E E T
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std
Description
-70
-90
-120
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
70
90
120
ns
t
WLAX
t
AH
Address Hold Time
Min
45
45
50
ns
t
DVWH
t
DS
Data Setup Time
Min
35
45
50
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
35
50
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Byte
Typ
9
μs
Word
Typ
11
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
RB
Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Max
90
ns
相關(guān)PDF資料
PDF描述
AM29LV081B120EF 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B120EI 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B120EK 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B-70ED 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B-70EF 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
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