參數(shù)資料
型號: AM29LV081B120EE
廠商: Advanced Micro Devices, Inc.
英文描述: 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
中文描述: 8兆位(1米× 8位)的CMOS 3.0伏特,只有統(tǒng)一部門閃存
文件頁數(shù): 3/40頁
文件大?。?/td> 438K
代理商: AM29LV081B120EE
DATA SHEET
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21525
Rev:
D
Amendment:
6
Issue Date:
October 12, 2006
Am29LV081B
8 Megabit (1 M x 8-Bit)
CMOS 3.0 Volt-only Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
Single power supply operation
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
Manufactured on 0.32 μm process technology
— Compatible with 0.5 μm Am29LV081 device
High performance
— Access times as fast as 70 ns
Ultra low power consumption (typical values at 5
MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
Flexible sector architecture
— Sixteen 64 Kbyte sectors
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
Minimum 1,000,000 write cycle guarantee
per sector
20-year data retention at 125
°
C
— Reliable operation for the life of the system
Package option
— 40-pin TSOP
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
Command sequence optimized for mass storage
— Specific addresses not required for unlock cycles
The Am29LV081B is not offered for new designs. Please contact a Spansion representative for alternates.
相關(guān)PDF資料
PDF描述
AM29LV081B120EF 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B120EI 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B120EK 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B-70ED 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
AM29LV081B-70EF 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV081B-70EC 制造商:Advanced Micro Devices 功能描述: 制造商:Atmel Corporation 功能描述:
AM29LV081B-70ED 制造商:Spansion 功能描述:IC FLASH MEMORY PARALLEL 制造商:Advanced Micro Devices 功能描述:NOR Flash, 1M x 8, 40 Pin, Plastic, TSSOP
AM29LV081B-70ED 制造商:Spansion 功能描述:Flash Memory IC
AM29LV081B-90EC 制造商:ADV-MICRO-DEV 功能描述:
AM29LV081B-90ED 制造商:Spansion 功能描述:Flash Memory IC 制造商:Advanced Micro Devices 功能描述:1M X 8 FLASH 3V PROM, 90 ns, PDSO40