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參數(shù)資料
| 型號： | AM29LV800DT-120ED |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1800pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate |
| 中文描述： | 512K X 16 FLASH 3V PROM, 120 ns, PDSO48 |
| 封裝： | LEAD FREE, MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 12/51頁 |
| 文件大小： | 1628K |
| 代理商： | AM29LV800DT-120ED |
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10
Am29LV800D
Am29LV800D_00_A4_E January 21, 2005
P R E L I M I N A R Y
Device Bus Operations
This section describes the requirements and use
of the device bus operations, which are initiated
through the internal command register. The
command register itself does not occupy any
addressable memory location. The register is
composed of latches that store the commands,
along with the address and data information
needed to execute the command. The contents
of the register serve as inputs to the internal
state machine. The state machine outputs
dictate the function of the device. Table 1 lists
the device bus operations, the inputs and
control levels they require, and the resulting
output. The following subsections describe each
of these operations in further detail.
Table 1. Am29LV800D Device Bus Operations
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, V
ID
= 12.0
±
0.5 V, X = Don’t Care, A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1. Addresses are A18:A0 in word mode (BYTE# = V
IH
), A18:A-1 in byte mode (BYTE# = V
IL
).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See
the “Sector Protection/Unprotection” section.
Word/Byte Configuration
The BYTE# pin controls whether the device data
I/O pins DQ15–DQ0 operate in the byte or word
configuration. If the BYTE# pin is set at logic ‘1’,
the device is in word configuration, DQ15–DQ0
are active and controlled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is
in byte configuration, and only data I/O pins
DQ0–DQ7 are active and controlled by CE# and
OE#. The data I/O pins DQ8–DQ14 are
tri-stated, and the DQ15 pin is used as an input
for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system
must drive the CE# and OE# pins to V
IL
. CE# is
the power control and selects the device. OE# is
the output control and gates array data to the
output pins. WE# should remain at V
IH
. The
BYTE# pin determines whether the device
outputs array data in words or bytes.
The internal state machine is set for reading
array data upon device power-up, or after a
hardware reset. This ensures that no spurious
alteration of the memory content occurs during
the power transition. No command is necessary
in this mode to obtain array data. Standard
microprocessor read cycles that assert valid
addresses on the device address inputs produce
valid data on the device data outputs. The
device remains enabled for read access until the
command register contents are altered.
See “Reading Array Data” for more information.
Refer to the AC Read Operations table for timing
specifications and to Figure 1 for the timing dia-
gram. I
CC1
in the DC Characteristics table repre-
sents the active current specification for reading
array data.
Operation
CE#
L
L
V
CC
±
0.3 V
L
X
OE
#
L
H
WE
#
H
L
RESET
#
H
H
V
CC
±
0.3 V
H
L
Addresses
(Note 1)
A
IN
A
IN
DQ0–
DQ7
D
OUT
D
IN
DQ8–DQ15
BYTE
#
= V
IH
D
OUT
D
IN
BYTE#
= V
IL
Read
Write
DQ8–DQ14 = High-
Z, DQ15 = A-1
Standby
X
X
X
High-Z High-Z
High-Z
Output Disable
Reset
H
X
H
X
X
X
High-Z High-Z
High-Z High-Z
High-Z
High-Z
Sector Protect (Note 2)
L
H
L
V
ID
Sector Address,
A6 = L, A1 = H,
A0 = L
Sector Address,
A6 = H, A1 = H,
A0 = L
A
IN
D
IN
X
X
Sector Unprotect (Note 2)
L
H
L
V
ID
D
IN
X
X
Temporary Sector Unprotect
X
X
X
V
ID
D
IN
D
IN
High-Z
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM29LV800DT-120WBI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 120NS 48FBGA - Trays |
| AM29LV800DT-70SI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 70NS 44SOIC - Rail/Tube |
| AM29LV800DT70WBI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV800DT-70WBI\\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 70NS 48FBGA - Tape and Reel |
| AM29LV800DT-70WBI\T | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 8MBIT 1MX8/512KX16 70NS 48FBGA - Tape and Reel |
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