參數(shù)資料
型號(hào)： AM29LV800DT-90WCF
廠商： ADVANCED MICRO DEVICES INC
元件分類： PROM
英文描述： 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
封裝： 6.15 X 8.15 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48
文件頁(yè)數(shù)： 43/51頁(yè)
文件大?。?/td> 1628K
代理商： AM29LV800DT-90WCF
January 21, 2005 Am29LV800D_00_A4_E
Am29LV800D
41
P R E L I M I N A R Y
AC Characteristics
Alternate CE# Controlled
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance”
section for more information.
Parameter
Speed Options
JEDEC
Std
Description
-70
-90
-120
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
70
90
120
ns
t
AVEL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
45
50
ns
t
DVEH
t
DS
Data Setup Time
Min
35
45
50
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
35
35
50
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Programming Operation
(Note 2)
Byte
Typ
8
μs
Word
Typ
16
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
相關(guān)PDF資料
PDF描述
AM29LV800DT-90WCI 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
AM29LV800DT-120ED Ceramic Chip Capacitors / MIL-PRF-55681; Capacitance [nom]: 1800pF; Working Voltage (Vdc)[max]: 100V; Capacitance Tolerance: +/-10%; Dielectric: Multilayer Ceramic; Temperature Coefficient: X7R (BX); Lead Style: Surface Mount Chip; Lead Dimensions: 0805; Termination: 100% Tin (Sn); Body Dimensions: 0.080" x 0.050" x 0.055"; Container: Bag; Features: MIL-PRF-55681: P Failure Rate
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