- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366528 > Am29PDS322DT10 (Advanced Micro Devices, Inc.) 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory PDF資料下載
參數(shù)資料
| 型號： | Am29PDS322DT10 |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory |
| 中文描述： | 32兆位（2米× 16位），1.8伏的CMOS只（1.8伏至2.2 V）同步讀/寫頁模式引導扇區(qū)閃存 |
| 文件頁數(shù)： | 26/50頁 |
| 文件大?。?/td> | 839K |
| 代理商： | AM29PDS322DT10 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁當前第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁
August 7, 2002
Am29PDS322D
25
A D V A N C E I N F O R M A T I O N
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard word program operation.
Refer to the Write Operation Status section for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode and Autoselect Command Sequence
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command. The address
of the erase-suspended sector is required when writ-
ing this command. Further writes of the Resume com-
mand are ignored. Another Erase Suspend command
can be written after the chip has resumed erasing.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Table 10 for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Figure 6.
Erase Operation
相關PDF資料 |
PDF描述 |
|---|---|
| Am29PDS322DB10 | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory |
| Am29PDS322DB12 | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory |
| Am29PDS322DT12 | 32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory |
| AM29PL160CB90EI | High Speed CMOS Logic 8-Bit Universal Shift Register with 3-State Outputs 20-CDIP -55 to 125 |
| AM29PL160CB-120 | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AM29PL141BXA | 制造商:AMD 功能描述:* |
| AM29PL141DC | 制造商:Advanced Micro Devices 功能描述:USER PROGRAMMABLE SPECIAL FUNCTION ASIC, 28 Pin, DIP |
| AM29PL160CB-90SF | 制造商:Advanced Micro Devices 功能描述: |
| AM29PL160CB-90SI | 制造商:SOCO 功能描述: |
| AM29SL160CT-100EIN | 制造商:Advanced Micro Devices 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。