參數(shù)資料
型號(hào)： AM29PL160CB90SKI
廠商： Advanced Micro Devices, Inc.
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
中文描述： 16兆位（2米× 8位/ 1個(gè)M x 16位）的CMOS 3.0伏，不僅具備高性能頁(yè)面模式閃存
文件頁(yè)數(shù)： 20/44頁(yè)
文件大?。?/td> 987K
代理商： AM29PL160CB90SKI
June 12, 2002
Am29PL160C
19
pend mode and continue the sector erase operation.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the device has resumed erasing.
Temporary Unprotect Enable/Disable
Command Sequence
The temporary unprotect command sequence is a
four-bus-cycle operation. The sequence is initiated by
writing two unlock write cycles. A third write cycle sets
up the command. The fourth and final write cycle en-
ables or disables the temporary unprotect feature. If
the temporary unprotect feature is enabled, all sectors
are temporarily unprotected. The system may program
or erase data as needed. When the system writes the
temporary unprotect disable command sequence, all
sectors return to their previous protected or unpro-
tected settings. See Table 10 for more information.
Notes:
1. See Table 10 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 2.
Erase Operation
START
Write Erase
Command Sequence
Data Poll
from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
相關(guān)PDF資料
PDF描述
AM29SL160CB-100WCIN 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160C 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160CB-100 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160CB-100ECN 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
AM29SL160CB-100EDN 16 Megabit CMOS 1.8 Volt-only Super Low Voltage Flash Memory
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