參數(shù)資料
型號: AM29PL160CB90SKI
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
中文描述: 16兆位(2米× 8位/ 1個M x 16位)的CMOS 3.0伏,不僅具備高性能頁面模式閃存
文件頁數(shù): 29/44頁
文件大?。?/td> 987K
代理商: AM29PL160CB90SKI
28
Am29PL160C
June 12, 2002
TEST CONDITIONS
Table 12.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
Figure 9.
Test Setup
Note:
Diodes are IN3064 or equivalent
Test Condition
-65R
-70R,
-90, -120
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
100
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
Figure 10.
Input Waveforms and Measurement Levels
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