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參數(shù)資料
| 型號： | AM29PL160CB90SKI |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory |
| 中文描述： | 16兆位（2米× 8位/ 1個M x 16位）的CMOS 3.0伏，不僅具備高性能頁面模式閃存 |
| 文件頁數(shù)： | 27/44頁 |
| 文件大?。?/td> | 987K |
| 代理商： | AM29PL160CB90SKI |
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26
Am29PL160C
June 12, 2002
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
. Typical V
CC
is 3.0 V.
2. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
3. The Automatic Sleep Mode current is dependent on the state of OE#.
4. I
CC
active while Embedded Erase or Embedded Program is in progress.
5. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode
current is 200 nA.
6. Not 100% tested.
Parameter
Symbol
Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to 5.5 V,
V
CC
= V
CC
max
±
1.0
μA
I
LIT
A9 Input Load Current
V
CC
= V
CC max
; A9 = 12.5 V
35
μA
I
LO
Output Leakage Current
V
OUT
= V
SS
to 5.5 V,
V
CC
= V
CC max
±
1.0
μA
I
CC1
V
CC
Active Read Current
(Notes 1, 2)
CE# = V
IL,
OE# = V
IH
30
50
mA
I
CC2
V
CC
Active Write Current
(Notes 2, 4, 5)
CE# = V
IL,
OE# = V
IH
20
30
mA
I
CC3
V
CC
Standby Current (Note 2)
CE# = V
CC
±
0.3 V
1
5
μA
I
CC4
Automatic Sleep Mode
(Notes 2, 3, 6)
V
IH
= V
CC
±
0.3 V;
V
IL
= V
SS
±
0.3 V
OE# = V
IH
1
5
μA
OE# = V
IL
8
20
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
0.7 x V
CC
5.5
V
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
V
CC
= 3.3 V
11.5
12.5
V
V
OL
Output Low Voltage
I
OL
= 4.0 mA, V
CC
= V
CC min
0.45
V
V
OH1
Output High Voltage
I
OH
= –2.0 mA, V
CC
= V
CC min
0.85 x V
CC
V
V
OH2
I
OH
= –100 μA, V
CC
= V
CC min
V
CC
–0.4
V
LKO
Low V
CC
Lock-Out Voltage
(Note 4)
2.3
2.5
V
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