參數(shù)資料
型號: AM29PL160CB90SKI
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only High Performance Page Mode Flash Memory
中文描述: 16兆位(2米× 8位/ 1個M x 16位)的CMOS 3.0伏,不僅具備高性能頁面模式閃存
文件頁數(shù): 32/44頁
文件大小: 987K
代理商: AM29PL160CB90SKI
June 12, 2002
Am29PL160C
31
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
Description
Speed Options
Unit
JEDEC
Std
-65R
-70R
-90
-120
t
ELFL/
t
ELFH
CE# to BYTE# Switching Low or High
Max
5
ns
t
FLQZ
BYTE# Switching Low to Output HIGH Z
Max
25
25
30
30
ns
t
FHQV
BYTE# Switching High to Output Active
Min
65
70
90
120
ns
DQ15
Output
Data Output
(DQ0–DQ7)
CE#
OE#
BYTE#
t
ELFL
DQ0–DQ14
Data Output
(DQ0–DQ14)
DQ15/A-1
Address
Input
t
FLQZ
BYTE#
Switching
from word
to byte
mode
DQ15
Output
Data Output
(DQ0–DQ7)
BYTE#
t
ELFH
DQ0–DQ14
Data Output
(DQ0–DQ14)
DQ15/A-1
Address
Input
t
FHQV
BYTE#
Switching
from byte
to word
mode
Figure 13.
BYTE# Timings for Read Operations
Note:
Refer to the Erase/Program Operations table for t
AS
and t
AH
specifications.
Figure 14.
BYTE# Timings for Write Operations
CE#
WE#
BYTE#
The falling edge of the last WE# signal
t
HOLD
(t
AH
)
t
SET
(t
AS
)
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