參數(shù)資料
型號: AM41DL6408G55IS
廠商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
中文描述: 64兆位(8米× 8位/ 4米x 16位),3.0伏的CMOS只,同時作業(yè)閃存和8兆位(1 M中的x 8-Bit/512畝x 16位),靜態(tài)存儲器
文件頁數(shù): 41/63頁
文件大?。?/td> 573K
代理商: AM41DL6408G55IS
40
Am41DL6408G
August 19, 2002
P R E L I M I N A R Y
TEST CONDITIONS
Table 16.
Test Specifications
KEY TO SWITCHING WAVEFORMS
2.7 k
C
L
6.2 k
3.3 V
Device
Under
Test
Note:
Diodes are IN3064 or equivalent
Figure 11.
Test Setup
Test Condition
70, 85
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
KS000010-PAL
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
3.0 V
0.0 V
1.5 V
1.5 V
Output
Measurement Level
Input
Figure 12.
Input Waveforms and Measurement Levels
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