參數(shù)資料
型號: AM41DL6408G55IS
廠商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
中文描述: 64兆位(8米× 8位/ 4米x 16位),3.0伏的CMOS只,同時作業(yè)閃存和8兆位(1 M中的x 8-Bit/512畝x 16位),靜態(tài)存儲器
文件頁數(shù): 48/63頁
文件大?。?/td> 573K
代理商: AM41DL6408G55IS
August 19, 2002
Am41DL6408G
47
P R E L I M I N A R Y
AC CHARACTERISTICS
OE#
CE#f
Addresses
V
CC
f
WE#
Data
2AAh
SADD
t
GHWL
t
AH
t
WP
t
WC
t
AS
t
WPH
555h for chip erase
10 for Chip Erase
30h
t
DS
t
VCS
t
CS
t
DH
55h
t
CH
In
Progress
Complete
t
WHWH2
VA
VA
Erase Command Sequence (last two cycles)
Read Status Data
RY/BY#
t
RB
t
BUSY
Notes:
1. SADD = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”.
2. These waveforms are for the word mode.
Figure 20.
Chip/Sector Erase Operation Timings
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