參數(shù)資料
型號(hào)： AM41DL6408G55IS
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
中文描述： 64兆位（8米× 8位/ 4米x 16位），3.0伏的CMOS只，同時(shí)作業(yè)閃存和8兆位（1 M中的x 8-Bit/512畝x 16位），靜態(tài)存儲(chǔ)器
文件頁(yè)數(shù)： 61/63頁(yè)
文件大?。?/td> 573K
代理商： AM41DL6408G55IS
60
Am41DL6408G
August 19, 2002
P R E L I M I N A R Y
SRAM DATA RETENTION
Notes:
1. CE1#s
≥
V
CC
– 0.2 V, CE2s
≥
V
CC
– 0.2 V (CE1#s controlled) or CE2s
≤
0.2 V (CE2s controlled), CIOs = V
SS
or V
CC
.
2. Typical values are not 100% tested.
Figure 33.
CE1#s Controlled Data Retention Mode
Figure 34.
CE2s Controlled Data Retention Mode
Parameter
Symbol
Parameter Description
Test Setup
Min
Typ
Max
Unit
V
DR
V
CC
for Data Retention
CS1#s
≥
V
CC
– 0.2 V (Note 1)
V
CC
= 3.0 V, CE1#s
≥
V
CC
– 0.2 V
(Note 1)
1.5
3.3
V
I
DR
Data Retention Current
1.0
(Note 2)
15
μA
t
SDR
t
RDR
Data Retention Set-Up Time
See data retention waveforms
0
ns
Recovery Time
t
RC
ns
V
DR
V
CC
2.7V
2.2V
CE1#s
GND
Data Retention Mode
CE1#s
≥
V
CC
-
0.2 V
t
SDR
t
RDR
V
CC
2.7 V
CE2s
0.4 V
GND
V
DR
Data Retention Mode
t
SDR
t
RDR
CE2s <
0.2 V
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