- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366545 > Am70PDL127CDH66IS (Advanced Micro Devices, Inc.) 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS PDF資料下載
參數(shù)資料
| 型號： | Am70PDL127CDH66IS |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| 中文描述： | 2 × 64兆位（8米× 16位）的CMOS 3.0伏特，只有頁面模式閃存數(shù)據(jù)存儲128兆位（8米× 16位）的CMOS |
| 文件頁數(shù)： | 56/127頁 |
| 文件大小： | 849K |
| 代理商： | AM70PDL127CDH66IS |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁當前第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁第103頁第104頁第105頁第106頁第107頁第108頁第109頁第110頁第111頁第112頁第113頁第114頁第115頁第116頁第117頁第118頁第119頁第120頁第121頁第122頁第123頁第124頁第125頁第126頁第127頁
54
Am70PDL127CDH/Am70PDL129CDH
November 24, 2003
A D V A N C E I N F O R M A T I O N
Legend:
DYB = Dynamic Protection Bit
OW = Address (A7:A0) is (00011010)
PD[3:0] = Password Data (1 of 4 portions)
PPB = Persistent Protection Bit
PWA = Password Address. A1:A0 selects portion of password.
PWD = Password Data being verified.
PL = Password Protection Mode Lock Address (A7:A0) is (00001010)
RD(0) = Read Data DQ0 for protection indicator bit.
RD(1) = Read Data DQ1 for PPB Lock status.
SA = Sector Address where security command applies. Address bits
A21:A12 uniquely select any sector.
SL = Persistent Protection Mode Lock Address (A7:A0) is (00010010)
WP = PPB Address (A7:A0) is (00000010) (Note16)
X = Don’t care
PPMLB = Password Protection Mode Locking Bit
SPMLB = Persistent Protection Mode Locking Bit
1.
2.
3.
See Table 1 for description of bus operations.
All values are in hexadecimal.
Shaded cells in table denote read cycles. All other cycles are
write operations.
During unlock and command cycles, when lower address bits are
555 or 2AAh as shown in table, address bits higher than A11
(except where BA is required) and data bits higher than DQ7 are
don’t cares.
The reset command returns device to reading array.
Cycle 4 programs the addressed locking bit. Cycles 5 and 6
validate bit has been fully programmed when DQ0 = 1. If DQ0 = 0
in cycle 6, program command must be issued and verified again.
Data is latched on the rising edge of WE#.
Entire command sequence must be entered for each portion of
password.
Command sequence returns FFh if PPMLB is set.
4.
5.
6.
7.
8.
9.
10. The password is written over four consecutive cycles, at
addresses 0-3.
11. A 2 μs timeout is required between any two portions of password.
12. A 100 μs timeout is required between cycles 4 and 5.
13. A 1.2 ms timeout is required between cycles 4 and 5.
14. Cycle 4 erases all PPBs. Cycles 5 and 6 validate bits have been
fully erased when DQ0 = 0. If DQ0 = 1 in cycle 6, erase command
must be issued and verified again. Before issuing erase
command, all PPBs should be programmed to prevent PPB
overerasure.
15. DQ1 = 1 if PPB locked, 0 if unlocked.
16. For PDL128G and PDL640G, the WP address is 0111010. The
EP address (PPB Erase Address) is 1111010.
17. Following the final cycle of the command sequence, the user must
write the first three cycles of the Autoselect command and then
write a Reset command.
18. If checking the DYB status of sectors in multiple banks, the user
must follow Note 17 before crossing a bank boundary.
Table 17.
Sector Protection Command Definitions
Command
(Notes)
C
1
Bus Cycles (Notes 1-4)
Addr Data Addr Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Reset
SecSi Sector Entry 3
SecSi Sector Exit
SecSi Protection
Bit Program (5, 6)
SecSi Protection
Bit Status
Password Program
(5, 7, 8)
Password Verify (6,
8, 9)
Password Unlock
(7, 10, 11)
PPB Program (5, 6,
12, 17)
PPB Status
All PPB Erase (5,
6, 13, 14)
PPB Lock Bit Set
(17)
PPB Lock Bit
Status (15)
DYB Write (7)
DYB Erase (7)
DYB Status (6, 18) 4
PPMLB Program
(5, 6, 12)
PPMLB Status (5)
SPMLB Program
(5, 6, 12)
SPMLB Status (5)
XXX
555
555
F0
AA
AA
2AA
2AA
55
55
555
555
88
90
4
XX
00
6
555
AA
2AA
55
555
60
OW
68
OW
48
OW
RD(0)
5
555
AA
2AA
55
555
60
OW
48
OW
RD(0)
4
555
AA
2AA
55
555
38
XX[0-3]
PD[0-3]
4
555
AA
2AA
55
555
C8
PWA[0-3]
PWD[0-3]
7
555
AA
2AA
55
555
28
PWA[0]
PWD[0]
PWA[1]
PWD[1]
PWA[2]
PWD[2]
PWA[3]
PWD[3]
6
555
AA
2AA
55
555
60
(SA)WP
68
(SA)WP
48
(SA)WP
RD(0)
5
555
AA
2AA
55
555
60
(SA)WP
48
(SA)WP
RD (0)
6
555
AA
2AA
55
555
60
WP
60
(SA)
40
(SA)WP
RD(0)
3
555
AA
2AA
55
555
78
4
555
AA
2AA
55
555
58
SA
RD(1)
4
4
555
555
555
AA
AA
AA
2AA
2AA
2AA
55
55
55
555
555
555
48
48
58
SA
SA
SA
X1
X0
RD(0)
6
555
AA
2AA
55
555
60
PL
68
PL
48
PL
RD(0)
5
555
AA
2AA
55
555
60
PL
48
PL
RD(0)
6
555
AA
2AA
55
555
60
SL
68
SL
48
SL
RD(0)
5
555
AA
2AA
55
555
60
SL
48
SL
RD(0)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Am70PDL127CDH66IT | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| Am70PDL127CDH85IS | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| Am70PDL127CDH85IT | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| Am70PDL129CDH | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
| Am70PDL129CDH66IS | 2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM70PDL127CDH66IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL127CDH85I | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL127CDH85IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL127CDH85IT | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) |
| AM70PDL129BDH | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。