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AMIS-30624 I
2
C Microstepping Motordriver
Data Sheet
10.0
DC Parameters
The DC parameters are given for Vbb and temperature in their operating ranges. Currents flowing in the circuit are defined as positive.
Table 5: DC Parameters
Symbol
Pin(s)
Parameter
Test Conditions
Motordriver
Max. current through motor coil
in normal operation
Max. RMS current through coil in normal
operation
I
MSabs
Absolute error on coil current
I
MSrel
Error on current ratio I
coilx
/ I
coily
V
bb
= 12V, T
j
= 50 °C
V
bb
= 8V, T
j
= 50 °C
V
bb
= 12V, T
j
= 150 °C
(including bond wire) at I
MSmax
V
bb
= 8V, T
j
= 150 °C
I
MSL
Pull down current
HiZ mode
Thermal Warning & Shutdown
T
tw
Thermal warning
T
tsd
Thermal shutdown
T
low
(2)
Low temperature warning
Supply and Voltage Regulator
T
amb
≤
125 °C
V
bb
Nominal operating supply range
T
amb
≤
85 °C
V
bbOTP
Supply voltage for OTP zapping
(3)
I
bat
Total current consumption
Unloaded outputs
I
bat_s
Sleep mode current consumption
UV
1
Stop voltage high threshold
UV
2
Stop voltage low threshold
V
dd
Internal regulated output
(4)
8V < V
bb
< 29V
I
ddStop
Digital current consumption
V
bb
< UV
2
Digital supply reset level @ power down
(5)
Min.
Typ.
Max.
Unit
I
MSmax,Peak
800
mA
I
MSmax,RMS
570
mA
-10
-7
10
7
1
1
1
1
%
%
mA
0.50
0.55
0.70
0.85
2
R
DSon
On resistance for each motor pin
MOTXP
MOTXN
MOTYP
MOTYN
138
145
T
tw
+ 10
T
tw
- 155
152
°C
°C
°C
(1) (2)
6.5
6.5
9.0
7.8
7.1
4.75
18
29
10.0
10.0
100
8.9
8.0
5.50
V
V
V
mA
μA
V
V
V
mA
3.50
50
8.4
7.5
5
2
VBB
V
ddReset
4.5
V
I
ddLim
VDD
Current limitation
Pin shorted to ground
42
mA
Switch Input and Hardwire Address Input
Rt_
OFF
Rt_
ON
SWI
HW
Switch OFF resistance
(6)
Switch ON resistance
(6)
Vbb range for guaranteed operation of
SWI and HW
10
k
k
Switch to Gnd or V
bat
,
2
V
bb_sw
6
29
V
V
max_sw
Maximum voltage
T < 1s
40V
V
mA
I
lim_sw
Current limitation
Short to Gnd or V
bat
30
I
2
C Serial Interface
V
IL
V
IH
Input level low
(7)
Input level high
(8)
Noise margin at the LOW level for each
connected device (including hysteresis)
Noise margin at the HIGH level for each
connected device (including hysteresis)
- 0.5
0.7 * V
dd
0.3 * V
dd
V
dd
+ 0.5
V
V
V
nL
0.1 * V
dd
V
V
nH
SDA
SCK
0.2 * V
dd
8
AMI Semiconductor
– Apr. 2007, Rev 3.1, M-20664-003
www.amis.com