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參數(shù)資料
| 型號(hào)： | AP4411GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 8.2 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | AP4411GM |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=-1mA
-
-0.016
-V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-8A
-
25
mΩ
VGS=-4.5V, ID=-4A
-
40
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-8A
-
8
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-30V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-24V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
2
ID=-8A
-
14
20
nC
Qgs
Gate-Source Charge
VDS=-24V
-
1.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
10.5
-
nC
td(on)
Turn-on Delay Time
2
VDS=-15V
-
12
-
ns
tr
Rise Time
ID=-1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
34
-
ns
tf
Fall Time
RD=15Ω
-28
-
ns
Ciss
Input Capacitance
VGS=0V
-
855
1360
pF
Coss
Output Capacitance
VDS=-25V
-
296
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
195
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
2
IS=-2.0A, VGS=0V
-
-1.2
V
trr
Reverse Recovery Time
IS=-8A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
21
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board ; 125 ℃/W when mounted on min. copper pad.
AP4411GM
± 25V
±100
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