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參數(shù)資料
| 型號(hào)： | AP4411GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 8.2 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | AP4411GM |
AP4411GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
20
40
60
80
100
120
02
46
8
10
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Cu
rre
n
t(A)
T A =25
o C
V G =-4.0V
-10V
-8.0V
-6.0V
-4.5V
10
30
50
70
90
3579
11
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
ΩΩΩΩ
)
I D =-8.0A
T A =25 ℃
℃
0.60
0.80
1.00
1.20
1.40
1.60
1.80
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(
ON)
I D =-8.0A
V G =-10V
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
-V
GS(
th)
(V
)
0
20
40
60
80
100
02
46
8
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Cu
rre
n
t(A)
T A =150
o C
V G =-4.0V
-4.5V
-6.0V
-8.0V
-10V
0
1
2
3
4
5
6
7
8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S
(A
)
T j =25
o C
T j =150
o C
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