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參數(shù)資料
| 型號(hào)： | AP4411GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 8.2 A, 30 V, 0.025 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 70K |
| 代理商： | AP4411GM |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP4411GM
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS
QGD
QG
Charge
10
100
1000
10000
1
5
9
131721
2529
-V DS , Drain-to-Source Voltage (V)
C
(p
F)
f=1.0MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
-V
GS
,
Gate
to
S
o
u
rc
eV
oltage
(
V
)
I D =-8A
V DS =-24V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
No
rm
a
lize
d
The
rm
a
lRe
sp
o
n
se
(R
thja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125
oC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A)
1ms
10ms
100ms
1s
10s
DC
T A =25 ℃
℃
Single Pulse
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