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參數(shù)資料
| 型號： | APTM100TDU35P |
| 元件分類： | JFETs |
| 英文描述： | 22 A, 1000 V, 0.35 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-21 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 315K |
| 代理商： | APTM100TDU35P |
APTM100TDU35P
A
P
T
M
100T
D
U
35P
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ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
160
180
0
10
203040
50
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=670V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
60
70
80
0
1020
3040
50
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=670V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
E
on
Eoff
0
0.5
1
1.5
2
2.5
0
102030
4050
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y(
m
J)
VDS=670V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
3.5
4
0
5
10
15
20
25
30
35
Gate Resistance (Ohms)
Sw
it
ch
in
g
En
e
rg
y
(m
J
)
Switching Energy vs Gate Resistance
VDS=670V
ID=22A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
200
225
250
5
8
10
13
15
18
20
ID, Drain Current (A)
F
req
u
e
n
cy
(
k
H
z)
Operating Frequency vs Drain Current
VDS=670V
D=50%
RG=5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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