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參數(shù)資料
| 型號(hào)： | APTM100U13SG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 65 A, 1000 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-4 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 285K |
| 代理商： | APTM100U13SG |
APTM100U13S
A
P
T
M
100U
13S
–
R
ev
2
J
ul
y,
2005
APT website – http://www.advancedpower.com
1 – 5
D
Q1
G
S
CR1
SK
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1000
V
Tc = 25°C
65
ID
Continuous Drain Current
Tc = 80°C
48
IDM
Pulsed Drain current
260
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
145
m
PD
Maximum Power Dissipation
Tc = 25°C
1250
W
IAR
Avalanche current (repetitive and non repetitive)
17
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
VDSS = 1000V
RDSon = 130m typ @ Tj = 25°C
ID = 65A @ Tc = 25°C
Application
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Power MOS V MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Single switch
Series & parallel diodes
MOSFET Power Module
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