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參數(shù)資料
| 型號(hào)： | APTM100U13S |
| 廠(chǎng)商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 65 A, 1000 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-4 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 285K |
| 代理商： | APTM100U13S |
APTM100U13S
A
P
T
M
100U
13S
–
R
ev
2
J
ul
y,
2005
APT website – http://www.advancedpower.com
4 – 5
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
rm
a
lI
m
pe
da
n
c
e
(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
5V
4.5V
VGS=15V
0
50
100
150
200
0
5
10
15
20
V
DS, Drain to Source Voltage (V)
I D
,D
rain
C
u
rr
en
t
(A
)
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
50
100
150
200
0
123
456
V
GS, Gate to Source Voltage (V)
I D
,
Dr
a
in
Cu
rr
en
t(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
R
DS(on) vs Drain Current
VGS=10V
VGS=20V
0.90
1.00
1.10
1.20
1.30
0
50
100
150
200
I
D, Drain Current (A)
R
DS
(o
n
)D
ra
in
t
o
S
o
u
rce
O
N
R
esis
tan
ce
Normalized to
VGS=10V @ 32.5A
0
10
20
30
40
50
60
70
25
50
75
100
125
150
T
C, Case Temperature (°C)
I D
,DC
Dr
a
in
C
u
rr
e
n
t(
A
)
DC Drain Current vs Case Temperature
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PDF描述 |
|---|---|
| APTM100U13S | 65 A, 1000 V, 0.145 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTM100U13SG | 功能描述:MOSFET N-CH 1000V 65A J3 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
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