參數(shù)資料
型號： ARF473
元件分類： 功率晶體管
英文描述： 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù)： 3/4頁
文件大?。?/td> 125K
代理商： ARF473
050-4920
Rev
C
6-2003
ARF473
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.4
0.1
0.05
0.01
0.005
0.001
0.1
0.02
0.05
0.2
D=0.5
0.01
SINGLE PULSE
9V
TC,CASETEMPERATURE(°C)
Figure 5, Typical Threshold Voltage vs Temperature
VDS,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
Figure 6, Typical Output Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
I D
,DRAIN
CURRENT
(AMPERES)
V
GS(th)
,THRESHOLD
VOLTAGE
(NORMALIZED)
5.5V
4.5V
4V
5V
VGS=15 & 10V
6V
8V
25
20
15
10
5
0
Table 1 - Typical Series Equivalent Large Signal Input - Output Impedance
Freq. (MHz)
27.12
40.68
63.8
81.36
127.4
4.78 - j 14.3
1.96 - j 9
0.59 - j 4.1
0.31 - j 1.65
0.4 + j 2.66
49 - j 38.8
33.6 - j 39.5
18 - j 33.5
12.3 - j 29
5.5 - j 20.3
Zin - Gate shunted with 100
IDQ = 75 mA each side
ZOL - Conjugate of optimum load for 300 Watts output at Vdd = 125V
Input and output impedances are measured from gate to gate and
drain to drain respectively
ZOL ()
Zin ()
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