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參數(shù)資料
| 型號： | AT49BV8004-90TC |
| 廠商： | ATMEL CORP |
| 元件分類： | PROM |
| 英文描述： | 1M X 8 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | PLASTIC, TSOP 1-48 |
| 文件頁數(shù)： | 15/21頁 |
| 文件大小： | 415K |
| 代理商： | AT49BV8004-90TC |
AT49BV8011(T)/8004(T)
3
Block Diagram
Device Operation
READ: The AT49BV80XX(T) is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins are
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dual-line
control gives designers flexibility in preventing bus
contention.
COMMAND SEQUENCES: When the device is first pow-
ered on it will be reset to the read or standby mode
depending upon the state of the control line inputs. In order
to perform other device functions, a series of command
sequences are entered into the device. The command
sequences are shown in the Command Definitions table
(I/O8 - I/O15 are don’t care inputs for the command codes).
The command sequences are written by applying a low
pulse on the WE or CE input with CE or WE low (respec-
tively) and OE high. The address is latched on the falling
edge of CE or WE, whichever occurs last. The data is
latched by the first rising edge of CE or WE. Standard
microprocessor write timings are used. The address
locations used in the command sequences are not affected
by entering the command sequences.
RESET: A RESET input pin is provided to ease some sys-
tem applications. When RESET is at a logic high level, the
device is in its standard operating mode. A low level on the
RESET input halts the present device operation and puts
the outputs of the device in a high impedance state. When
a high level is reasserted on the RESET pin, the device
returns to the Read or Standby mode, depending upon the
state of the control inputs. By applying a 12V
± 0.5V input
signal to the RESET pin any sector can be reprogrammed
even if the sector lockout feature has been enabled (see
Sector Programming Lockout Override section).
ERASURE: Before a byte/word can be reprogrammed, it
must be erased. The erased state of memory bits is a logi-
cal “1”. The entire device can be erased by using the Chip
Erase command or individual sectors can be erased by
using the Sector Erase commands.
IDENTIFIER
REGISTER
STATUS
REGISTER
DATA
COMPARATOR
OUTPUT
MULTIPLEXER
OUTPUT
BUFFER
INPUT
BUFFER
COMMAND
REGISTER
DATA
REGISTER
Y-GATING
WRITE STATE
MACHINE
PROGRAM/ERASE
VOLTAGE SWITCH
CE
WE
OE
RESET
BYTE
RDY/BUSY
VPP
VCC
GND
Y-DECODER
X-DECODER
INPUT
BUFFER
ADDRESS
LATCH
I/O0 - I/O15/A-1
A0 - A18
PLANE B
SECTORS
PLANE A SECTORS
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AT49BV8011 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory |
| AT49BV8011-11CI | 功能描述:IC FLASH 8MBIT 110NS 48CBGA 制造商:microchip technology 系列:- 包裝:托盤 零件狀態(tài):停產(chǎn) 存儲器類型:非易失 存儲器格式:閃存 技術:FLASH 存儲容量:8Mb （1M x 8，512K x 16） 寫周期時間 - 字，頁:50μs 訪問時間:110ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.3 V 工作溫度:-40°C ~ 85°C（TC） 安裝類型:表面貼裝 封裝/外殼:48-VFBGA，CSBGA 供應商器件封裝:48-CBGA（6x8） 基本零件編號:AT49BV8011 標準包裝:360 |
| AT49BV8011-12CC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| AT49BV8011-12CI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| AT49BV8011-12TC | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory |
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