參數(shù)資料
型號: AUIRFS3006-7P
元件分類: JFETs
英文描述: 240 A, 60 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CB
封裝: ROHS COMPLIANT, PLASTIC, D2PAK-7
文件頁數(shù): 9/11頁
文件大小: 239K
代理商: AUIRFS3006-7P
AUIRFS3006-7P
www.irf.com
7
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
RG
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
VGS
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 21.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
-
RG
VDD
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Inductor Current
D.U.T.
VDS
ID
IG
3mA
VGS
.3
μF
50K
Ω
.2
μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VDS
90%
10%
VGS
td(on)
tr
td(off) tf
VDS
Pulse Width ≤ 1 s
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
- VDD
VGS
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