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參數(shù)資料
| 型號(hào)： | BFQ34 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN 4 GHz wideband transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 73K |
| 代理商： | BFQ34 |
September 1995
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
DESCRIPTION
NPN transistor encapsulated in a 4
lead SOT122A envelope with a
ceramic cap. All leads are isolated
from the stud.
It is primarily intended for driver and
final stages in MATV system
amplifiers. It is also suitable for use in
low power band IV and V equipment.
Diffused emitter-ballasting resistors
and the application of gold sandwich
metallization ensure an optimum
temperature profile and excellent
reliability properties. The device also
features high output voltage
capabilities.
PINNING
PIN
DESCRIPTION
Code: BFQ34/01
collector
emitter
base
emitter
1
2
3
4
Fig.1 SOT122A.
lfpage
Top view
MBK187
3
1
2
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
f
T
V
o
collector-base voltage
collector-emitter voltage
collector current
total power dissipation
transition frequency
output voltage
open emitter
open base
25
18
150
2.7
V
V
mA
W
GHz
V
up to T
c
= 160
°
C
I
C
= 150 mA; V
CE
= 15 V; f = 500 MHz 4
I
C
= 120 mA; V
CE
= 15 V; R
L
= 75
;
T
amb
= 25
°
C; d
im
=
60 dB
f
(p
+
q-r)
= 793.25 MHz
I
C
= 120 mA; V
CE
= 15 V; R
L
= 75
;
f = 800 MHz; T
amb
= 25
°
C
I
C
= 120 mA; V
CE
= 15 V; R
L
= 75
;
T
amb
= 25
°
C
1.2
P
L1
output power at 1 dB gain
compression
third order intercept point
26
dBm
ITO
45
dBm
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFQ34/01,112 | 功能描述:射頻雙極小信號(hào)晶體管 BULK TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFQ34/01/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR UHF BIPOLAR BREITBAND |
| BFQ34/1 | 功能描述:射頻MOSFET小信號(hào)晶體管 RF Bipolar Module RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BFQ35 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 200MA I(C) | TO-39 |
| BFQ36 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 200MA I(C) | TO-39 |
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