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參數(shù)資料
| 型號： | BFQ34 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN 4 GHz wideband transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 73K |
| 代理商： | BFQ34 |
September 1995
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ34
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
Measured with grounded emitter and base.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
S
1
S
11
–
3.
d
im
=
60 dB (DIN 45004B, par. 6.3.: 3-tone); I
C
= 120 mA; V
CE
= 15 V; R
L
= 75
; T
amb
= 25
°
C;
V
p
= V
O
at d
im
=
60 dB; f
p
= 795.25 MHz;
V
q
= V
O
6 dB; f
q
= 803.25 MHz;
V
r
= V
O
6 dB; f
r
= 805.25 MHz;
measured at f
(p+q
r)
= 793.25 MHz.
I
C
= 120 mA; V
CE
= 15 V; T
amb
= 25
°
C; R
L
= 75
;
measured at f = 800 MHz.
I
C
= 120 mA; V
CE
= 15 V; R
L
= 75
; T
amb
= 25
°
C;
P
p
= ITO
6 dB; f
p
= 800 MHz;
P
q
= ITO
6 dB; f
q
= 801 MHz;
measured at f
(2q
p)
= 802 MHz and at f
(2p
q)
= 799 MHz.
4.
5.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
25
70
25
70
3.5
3.5
4
UNIT
μ
A
I
CBO
h
FE
collector cut-off current
DC current gain
I
E
= 0; V
CB
= 15 V
I
C
= 75 mA; V
CE
= 15 V
I
C
= 150 mA; V
CE
= 15 V
I
C
= 75 mA; V
CE
= 15 V; f = 500 MHz 3
I
C
= 150 mA; V
CE
= 15 V;
f = 500 MHz
I
E
= 0; V
CB
= 15 V; f = 1 MHz
I
C
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 15 V; f = 1 MHz;
T
amb
= 25
°
C
note 1
I
C
= 120 mA; V
CE
= 15 V;
f = 500 MHz; T
amb
= 25
°
C
I
C
= 120 mA; V
CE
= 15 V;
f = 500 MHz; T
amb
= 25
°
C
Figs 2 and 7 and note 3
note 4
100
f
T
transition frequency
GHz
GHz
C
c
C
e
C
re
collector capacitance
emitter capacitance
feedback capacitance
2
11
1
2.75
1.35
pF
pF
pF
C
c-s
F
collector-stud capacitance
noise figure (see Fig.2)
0.8
8
pF
dB
G
UM
maximum unilateral power gain
(note 2)
output voltage
output power at 1 dB gain
compression (see Fig.2)
third order intercept point (see Fig.2)
16.3
dB
V
o
P
L1
1.2
26
V
dBm
ITO
note 5
45
dBm
G
UM
10
2
1
S
22
–
--------------------------------------------------------------
dB.
log
=
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| BFQ34/01,112 | 功能描述:射頻雙極小信號晶體管 BULK TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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| BFQ36 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 200MA I(C) | TO-39 |
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