參數(shù)資料
型號(hào)： BLF4G10LS-160
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 3 PIN
文件頁(yè)數(shù)： 12/15頁(yè)
文件大?。?/td> 124K
代理商： BLF4G10LS-160
BLF4G10LS-160_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
6 of 15
NXP Semiconductors
BLF4G10LS-160
UHF power LDMOS transistor
VDS = 28 V; IDq = 900 mA; Tcase =25 °C;
f = 894 MHz.
VDS =28V; IDq = 900 mA; Tcase =25 °C;
f = 894 MHz.
Fig 7.
GSM EDGE rms EVM and peak EVM as
functions of average load power; typical values
Fig 8.
GSM EDGE ACPR and rms EVM as functions of
drain efciency; typical values
VDS = 28 V; IDq = 1100 mA; f = 881.5 MHz.
Test signal: IS-95 with PAR = 9.9 dB at 0.01 %
probability.
VDS =28V; IDq = 1100 mA.
(1) f = 869 MHz.
(2) f = 881.5 MHz.
(3) f = 894 MHz.
Fig 9.
CDMA power gain and drain efciency as
functions of average load power; typical values,
measured in a CDMA demo test circuit
Fig 10. CDMA power gain as a function of average load
power at various frequencies; typical values,
measured in a CDMA demo test circuit
001aag552
PL(AV) (W)
0
100
80
40
60
20
8
4
12
16
EVM
(%)
0
EVMM
EVMrms
001aag553
ηD (%)
060
40
20
64
68
60
56
ACPR
(dBc)
72
2
1
3
4
EVM
(%)
0
EVMrms
ACPR400
001aag554
PL(AV) (dBm)
28
48
44
36
40
32
18
17
19
20
Gp
(dB)
16
20
10
30
40
ηD
(%)
0
Gp
ηD
001aag555
PL(AV) (dBm)
28
48
44
36
40
32
18
17
19
20
Gp
(dB)
16
1
2
3
相關(guān)PDF資料
PDF描述
BLF4G20-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20S-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G22-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF4G10LS-160,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G10S-120 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:UHF power LDMOS transistor
BLF4G20-110 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502A
BLF4G20-110B 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G20-110B,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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