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參數(shù)資料
| 型號： | BLF4G10LS-160 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, LDMOST, 3 PIN |
| 文件頁數(shù)： | 15/15頁 |
| 文件大?。?/td> | 124K |
| 代理商： | BLF4G10LS-160 |
BLF4G10LS-160_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
9 of 15
NXP Semiconductors
BLF4G10LS-160
UHF power LDMOS transistor
[1]
American Technical Ceramics type 100B or capacitor of same quality.
[2]
The striplines are on a double copper-clad Rogers 6006 Printed-Circuit Board (PCB) with
εr = 6.15 and
thickness = 0.635 mm.
L9
stripline
[2] (W
× L) 0.914 mm × 19.126 mm
L10
stripline
[2] (W
× L) 0.914 mm × 6.858 mm
R1
SMD resistor
5.1
Table 9.
List of components (see Figure 12 and Figure 13). …continued
Component
Description
Value
Remarks
See Table 10 for a list of components
Fig 14. Circuit schematic for 869 MHz to 894 MHz CDMA demo test circuit
C3
001aag559
Vbias(12 V - 28 V)
VDD(28 V)
RF in
RF out
C11
C2
C4
L9
C12
L10
L8
L7
L4
Q3
L3
C1
L2
L1
R8
R2
R9
R10
R7
R1
Q1
R6
Q2
R5
R3
R4
C10
C9
C8
L6
L5
C5
C6
C7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BLF4G20-110B | UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB |
| BLF4G20S-110B | UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB |
| BLF4G20LS-130 | UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB |
| BLF4G22-100 | UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB |
| BLF4G22S-100 | UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF4G10LS-160,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G10S-120 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor |
| BLF4G20-110 | 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502A |
| BLF4G20-110B | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G20-110B,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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