參數(shù)資料
型號(hào)： BLF4G10LS-160
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 800 - 1000 GHz; Mode: CW / EDGE ; Output power: 25 W; Package material: SOT502B ; Power gain: 18 dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 3 PIN
文件頁數(shù)： 2/15頁
文件大?。?/td> 124K
代理商： BLF4G10LS-160
BLF4G10LS-160_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 19 June 2007
10 of 15
NXP Semiconductors
BLF4G10LS-160
UHF power LDMOS transistor
The other side is unetched and serves as a ground plane.
See Table 10 for a list of components.
Fig 15. Component layout for 869 MHz to 894 MHz CDMA demo test circuit
001aag594
BLF4G10LS-160
CDMA in
BLF4G10LS-160
CDMA out
VDD(28 V)
Vbias(12 V - 28 V)
Q1
C3
R6
R8
C6
C7
L1
L2
L3
L4
L7
L8
L9
L10
L5
L6
C8
C9 C10
C11
C12
R9
Q2
Q3
C2
C4
R5
R4
C5
R1
R2
R7
R3
R10
C1
Table 10.
List of components (see Figure 14 and Figure 15).
Component
Description
Value
Remarks
C1, C6, C8
multilayer ceramic chip
capacitor
68 pF
C2, C7
multilayer ceramic chip
capacitor
1.3 pF
C3, C4
ceramic capacitor
100 nF
C5, C10
tantalum capacitor
10
F
C9
ceramic capacitor
1
F
C11
electrolytic capacitor
2200
F
C12
multilayer ceramic chip
capacitor
18 pF
L1
stripline
× L) 0.914 mm × 10.160 mm
L2
stripline
× L) 0.914 mm × 24.384 mm
L3
tapered stripline
[2] (W1
× W2 × L)
0.914 mm
× 19.812 mm × 11.024 mm
L4
stripline
× L) 19.812 mm × 21.438 mm
L5
stripline
× L) 0.914 mm × 42.342 mm
L6
stripline
× L) 1.524 mm × 42.418 mm
L7
stripline
× L) 17.221 mm × 22.479 mm
L8
tapered stripline
[2] (W1
× W2 × L)
17.221 mm
× 0.914 mm × 20.625 mm
L9
stripline
× L) 0.914 mm × 19.126 mm
相關(guān)PDF資料
PDF描述
BLF4G20-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20S-110B UHF power LDMOS transistor - Application: GSM EDGE and CW ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 38.5 %; Frequency: 1930 - 1990 MHz; Load power: 49 (avg) W; Operating voltage: 28 VDC; Power gain: 13.8 dB
BLF4G20LS-130 UHF power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 32 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT896-1 ; Power gain: 18 dB
BLF4G22-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
BLF4G22S-100 UHF power LDMOS transistor - Application: W-CDMA ; Description: Basestation LDMOS RF POWER Transistor ; Efficiency: 26@W-CDMA %; Frequency: 2000 - 2200 MHz; Load power: 24 avg (W-CDMA) W; Operating voltage: 28 VDC; Power gain: 13.5 dB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF4G10LS-160,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G10S-120 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor
BLF4G20-110 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502A
BLF4G20-110B 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G20-110B,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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