參數(shù)資料
型號: BLW86
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: HF/VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-123A, 4 PIN
文件頁數(shù): 10/15頁
文件大?。?/td> 117K
代理商: BLW86
August 1986
10
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
V
CE
= 28 V; f
1
= 28,000; f
2
= 28,001 MHz.
Note
1.
Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
List of components:
OUTPUT POWER
W
G
P
dB
η
dt
(%)
at 47,5 W
I
C
(A)
(P.E.P.)
d
3
dB
(1)
typ.
30
typ.
30
d
5
dB
(1)
<
30
<
30
I
C(ZS)
mA
T
h
°
C
25
70
5 to 47,5 (P.E.P.)
5 to 42,5 (P.E.P.)
typ. 19
typ. 19
typ. 45
typ. 1,9
50
50
C1 = C2 = 10 to 780 pF film dielectric trimmer
C3 = C5 = C6 = 220 nF polyester capacitor
C4 = 56 pF ceramic capacitor (500 V)
C7 = C8 = 15 to 575 pF film dielectric trimmer
L1 = 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 7,0 mm; leads 2
×
5 mm
L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = 4 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 9,4 mm; leads 2
×
5 mm
L4 = 7 turns enamelled Cu wire (1,6 mm); int. dia. 12 mm; length 17,2 mm; leads 2
×
5 mm
R1 =1,2
; parallel connection of 4
×
4,7
carbon resistors
R2 = 39
carbon resistor
Fig.16 Test circuit; s.s.b. class-AB.
handbook, full pagewidth
50
MGP642
50
temperature
compensated bias
R1
L2
L1
R2
L4
T.U.T.
L3
C7
C4
C5
C6
C8
C1
C2
C3
+
VCC
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