參數(shù)資料
型號: BLW86
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: HF/VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-123A, 4 PIN
文件頁數(shù): 12/15頁
文件大?。?/td> 117K
代理商: BLW86
August 1986
12
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
Ruggedness in s.s.b. operation
The BLW86 is capable of withstanding a load mismatch (VSWR = 50) under the following conditions: class-AB operation;
f
1
= 28,000 MHz; f
2
= 28,001 MHz; V
CE
= 28 V; T
h
= 70
°
C and P
Lnom
= 50 W P.E.P.
R.F. performance in s.s.b. class-A operation (linear power amplifier)
V
CE
= 26 V; f
1
= 28,000 MHz; f
2
= 28,001 MHz
Note
1.
Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
OUTPUT POWER
W
G
P
dB
I
C
A
d
3
dB
(1)
typ.
40
typ.
42
d
5
dB
(1)
<
40
<
40
T
h
°
C
70
25
17 (P.E.P.)
17 (P.E.P.)
typ. 22
typ. 22
1,7
1,7
Fig.21 Test circuit; s.s.b. class-A.
handbook, full pagewidth
50
MGP647
50
L3
L1
R3
R4
L5
T.U.T.
L4
C10
C5
C7
C8
C6
C11
C1
C2
C3
C4
L2
R2
R1
C9
R7
R9
+
VCC
R5
R8
R6
BY206
BD204
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