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參數(shù)資料
| 型號： | BLW86 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁數(shù)： | 4/15頁 |
| 文件大?。?/td> | 117K |
| 代理商： | BLW86 |
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 25 mA
Collector-emitter breakdown voltage
open base; I
C
= 100 mA
Emitter-base breakdown voltage
open collector; I
E
= 10 mA
Collector cut-off current
V
BE
= 0; V
CE
= 36 V
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
R
BE
= 10
D.C. current gain
(1)
I
C
= 2,5 A; V
CE
= 5 V
V
(BR)CES
>
65 V
V
(BR)CEO
>
36 V
V
(BR)EBO
>
4 V
I
CES
<
10 mA
E
SBO
E
SBR
>
>
8 mJ
8 mJ
h
FE
typ.
45
10 to 80
D.C. current gain ratio of matched devices
(1)
I
C
= 2,5 A; V
CE
= 5 V
Collector-emitter saturation voltage
(1)
I
C
= 7,5 A; I
B
= 1,5 A
Transition frequency at f = 100 MHz
(1)
I
E
= 2,5 A; V
CB
= 28 V
I
E
= 7,5 A; V
CB
= 28 V
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 28 V
Feedback capacitance at f = 1 MHz
I
C
= 100 mA; V
CE
= 28 V
Collector-flange capacitance
h
FE1
/h
FE2
<
1,2
V
CEsat
typ.
1,5 V
f
T
f
T
typ.
typ.
570 MHz
570 MHz
C
c
typ.
82 pF
C
re
C
cf
typ.
typ.
54 pF
2 pF
Note
1.
Measured under pulse
conditions: t
p
≤
200
μ
s;
δ ≤
0,02.
Fig.4
Typical values;
V
CE
= 28 V.
handbook, halfpage
0.5
2
0
1.5
MGP632
1
Th = 70
°
C
25
°
C
IC
(A)
VBE (V)
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| BLW898 | UHF linear power transistor |
| BLW90 | UHF power transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BLW87 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW89 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
| BLW898 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF linear power transistor |
| BLW90 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLW91 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
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