參數(shù)資料
型號: BLW86
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: HF/VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-123A, 4 PIN
文件頁數(shù): 13/15頁
文件大小: 117K
代理商: BLW86
August 1986
13
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
List of components in Fig.21:
C1 = C2 = 10 to 780 pF film dielectric trimmer
C3 = 22 nF ceramic capacitor (63 V)
C4 = 47
μ
F/10 V electrolytic capacitor
C5 = 56 pF ceramic capacitor (500 V)
C6 = 47
μ
F/35 V electrolytic capacitor
C7 = C8 = 220 nF polyester capacitor
C9 = 10
μ
F/35 V electrolytic capacitor
C10 = 10 to 210 pF film dielectric trimmer
C11 = 15 to 575 pF film dielectric trimmer
L1 = 3 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2
×
5 mm
L2 = L3 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = 11 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
L5 = 14 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 11,0 mm
R1 = 600
;
parallel connection of 2
×
1,2 k
carbon resistors (
±
5%; 0,5 W each)
R2 = 15
carbon resistor (
±
5%; 0,25 W)
R3 = 1,2
; parallel connection of 4
×
4,7
carbon resistors (
±
5%; 0,125 W each)
R4 = 33
carbon resistor (
±
5%; 0,25 W)
R5 = 18
carbon resistor (
±
5%; 0,25 W)
R6 = 120
wirewound resistor (
±
5%; 5,5 W)
R7 =
1
carbon resistor (
±
5%; 0,125 W)
R8 = 47
wirewound potentiometer (3 W)
R9 = 1,57
;
parallel connection of 3
×
4,7
wirewound resistors (
±
5%; 5,5 W each)
Fig.22 Intermodulation distortion as a function of output power. Typical values; V
CE
= 26 V; T
h
= 70
°
C;
f
1
= 28,000 MHz; f
2
= 28,001 MHz.
handbook, halfpage
d3
(dB)
0
30
30
50
60
40
10
20
P.E.P. (W)
MGP648
IC = 1.4 A
1.55 A
1.7 A
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