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參數(shù)資料
| 型號(hào)： | BS170KL-TR1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) MOSFET |
| 中文描述： | N通道60 - V（下局副局長）MOSFET的 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 49K |
| 代理商： | BS170KL-TR1 |
April 1995
3
Philips Semiconductors
Product specification
N-channel vertical D-MOS transistor
BS170
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC) at T
c
= 25
°
C
Total power dissipation up to T
amb
= 25
°
C
Storage temperature range
Junction temperature
V
DS
V
DG
V
GS
I
D
P
tot
T
stg
T
j
max.
max.
max.
max.
max.
60 V
60 V
15 V
500 mA
830 mW
55 to +150
°
C
max.
150
°
C
From junction to ambient
R
th j-a
=
150 K/W
Drain-source breakdown voltage
V
GS
= 0; I
D
= 100
μ
A
min.
typ.
60
90
V
V
V
(BR)DS
Gate threshold voltage
V
GS
= V
DS
; I
D
= 1 mA
min.
max.
0.8
3.0
V
V
V
GS(th)
Gate-source leakage current
V
GS
= 15 V; V
DS
= 0
Drain cut-off current
V
DS
= 25 V; V
GS
= 0
Drain-source ON-resistance (note 1)
V
GS
= 10 V; I
D
= 200 mA
I
GSoff
max.
10 nA
I
DSS
max.
0.5
μ
A
typ.
max.
2.5
5.0
R
DS(on)
Forward transconductance (note 1)
V
DS
= 10 V; I
D
= 200 mA; f = 1 kHz
Capacitances at f = 1 MHz
V
DS
= 10 V; V
GS
= 0
g
fs
typ.
200 mS
typ.
max.
25
40
pF
pF
C
iss
C
os
typ.
max.
typ.
max.
22
30
pF
pF
pF
pF
C
rs
6
10
Switching times at I
D
= 200 mA
I
D
= 200 mA; V
DS
= 50 V;
typ.
max.
4
10
ns
ns
t
on
V
GS
= 0 to 10 V
t
off
typ.
max.
4
10
ns
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS170KL-TR1-E3 | 功能描述:MOSFET 60V 0.47A 0.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS170L | 制造商:CALOGIC 制造商全稱:CALOGIC 功能描述:N-Channel Enhancement-Mode MOS Transistor |
| BS170P | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS170P | 制造商:Diodes Incorporated 功能描述:MOSFET N E-LINE |
| BS170PSTOA | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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