參數(shù)資料
型號(hào)： BSN20W
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： N-channel enhancement mode vertical D-MOS transistor
中文描述： 80 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： PLASTIC, SC-70, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 73K
代理商： BSN20W
2000 Mar 10
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20W
FEATURES
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
APPLICATIONS
Thin and thick film circuits
General purpose fast switching applications.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a 3 pin plastic SOT323 SMD package.
PINNING - SOT323
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PIN
SYMBOL
DESCRIPTION
1
2
3
g
s
d
gate
source
drain
Fig.1 Simplified outline and symbol.
Marking code
: M8- = made in Hong Kong; M8t = made in Malaysia
(or Bangkok).
handbook, halfpage
1
2
3
Top view
MAM356
s
d
g
QUICK REFERENCE DATA
Note
1.
Device mounted on a printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
DS
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
50
1.8
80
15
200
V
V
mA
mW
T
amb
≤
25
°
C;
note 1
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BSN254 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode vertical D-MOS transistors
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