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參數(shù)資料
| 型號(hào)： | BSN20W |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | 80 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SC-70, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 73K |
| 代理商： | BSN20W |
2000 Mar 10
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSN20W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Device mounted on a printed-circuit board.
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
65
65
50
±
20
80
300
200
+150
+150
V
V
mA
mA
mW
°
C
°
C
open drain
T
amb
≤
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
8
14
18
8
7
2
MAX.
1.8
1
±
100
15
20
30
15
15
5
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
V
GS
= 0; I
D
= 10
μ
A
V
GS
= V
DS
; I
D
= 1 mA
V
GS
= 0; V
DS
= 40 V
V
GS
=
±
20 V; V
DS
= 0
V
GS
= 10 V; I
D
= 80 mA
V
GS
= 5 V; I
D
= 80 mA
V
GS
= 2.5 V; I
D
= 10 mA
V
GS
= 0; V
DS
= 10 V; f = 1 MHz
V
GS
= 0; V
DS
= 10 V; f = 1 MHz
V
GS
= 0; V
DS
= 10 V; f = 1 MHz
50
0.4
V
V
μ
A
nA
pF
pF
pF
C
iss
C
oss
C
rss
Switching times
input capacitance
output capacitance
reverse transfer capacitance
t
on
turn-on time
V
GS
= 0 to 10 V; V
DD
= 20 V;
I
D
= 80 mA
V
GS
= 10 to 0 V; V
DD
= 20 V;
I
D
= 80 mA
2
5
ns
t
off
turn-off time
5
10
ns
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