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參數(shù)資料
| 型號： | BUT11AF |
| 廠商： | 永盛國際集團 |
| 英文描述： | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
| 中文描述： | 擴散硅功率晶體管（一般）的說明 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 116K |
| 代理商： | BUT11AF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT11AF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 9 V; I
= 0 A
I
= 0 A; I
C
= 100 mA;
L = 25 mH
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
EBO
V
CEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
10
-
mA
V
450
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltages I
C
= 2.5 A; I
B
= 0.5 A
Base-emitter saturation voltage
DC current gain
-
-
-
-
1.5
1.3
35
35
V
V
I
C
= 2.5 A; I
B
= 0.5 A
I
C
= 5 mA; V
= 5 V
I
C
= 500 mA; V
CE
= 5 V
10
10
18
20
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
t
on
Turn-on time
t
s
Turn-off storage time
t
f
Turn-off fall time
Switching times (inductive load)
CONDITIONS
I
Con
= 2.5 A; I
Bon
= -I
Boff
= 0.5 A
TYP.
MAX.
UNIT
-
-
-
1
4
μ
s
μ
s
μ
s
0.8
I
= 2.5 A; I
Bon
= 0.5 A; L
B
= 1
μ
H;
-V
BB
= 5 V
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
1.1
80
1.4
150
μ
s
ns
I
= 2.5 A; I
Bon
= 0.5 A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
t
s
t
f
Turn-off storage time
Turn-off fall time
1.2
140
1.5
300
μ
s
ns
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
1
Measured with half sine-wave voltage (curve tracer).
August 1997
2
Rev 1.000
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