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參數(shù)資料
| 型號： | BUT12XI |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 59K |
| 代理商： | BUT12XI |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT12XI
GENERAL DESCRIPTION
Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially
suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
motor control systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
MAX.
1000
450
8
20
33
1.5
UNIT
V
V
A
A
W
V
T
hs
≤
25 C
I
C
= 5.0 A;I
B
= 0.86 A
I
Csat
t
f
Collector saturation current
Inductive fall time
5
-
-
A
ns
I
Con
= 5.0A;I
Bon
= 1.0A,T
j
≤
100C
300
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
1000
450
8
20
4
6
33
150
150
UNIT
V
V
A
A
A
A
W
C
C
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
3.65
-
UNIT
K/W
K/W
1 2 3
case
b
c
e
June 1997
1
Rev 1.000
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